switching diode imn11 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) ultra high speed switching ? features 1) small mold type. (smd6) 2) high reliability. ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ?absolute maximum ratings (ta=25c) symbol unit v rm v v r v i fm ma io ma i surge a pd mw tj c tstg c ?electrical characteristics (ta=25c) symbol min. typ. max. unit conditions v f - - 1.2 v i f =100ma i r - - 0.1 a v r =70v ct - - 3.5 pf v r =6v , f=1mhz trr - - 4 ns v r =6v , i f =5ma , rl=50? forward voltage reverse current capacitance between terminals reverse recovery time storage temperature ? 55 to ? 150 (*1) not exceed 200mw per element. parameter power dissipation (total)(*1) 300 junction temperature 150 average rectified forward current (single) 100 surge current (t=1us) (single) 4 reverse voltage (dc) 80 forward current (single) 300 parameter limits reverse voltage (repetitive peak) 80 smd6 0.8min. 19 2.4 1.0min. 0.45 0.35 0.95 0.95 0.45 0.35 0.6 3.20.1 4.00.1 4.00.1 2.00.05 1.550.1 0 3.50.05 1.750.1 8.00.2 1.05min 3.20.1 1.350.1 3.20.1 0.30.1 5.50.2 00.5 rohm : smd6 jeita : sc-74 jedec :s0t-457 week code 1pin mark 2.90.2 2.80.2 1.90.2 1.6 0.2 0.1 0.95 0.95 `??? 00.1 (3) (5) (1) (4) (2) (6) 0.30.6 0.150.1 0.06 1.10.2 0.1 0.80.1 0.30.1 0.05 each lead has same dimension 1/2 2011.06 - rev.b data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
imn11 0 1 2 3 4 5 6 7 8 9 10 forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) trr dispersion map reverse recovery time:trr(ns) electrostatic discharge test esd(kv) esd dispersion map 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 1000 ta=-25 ta=125 ta=75 ta=25 ta=150 0.01 0.1 1 10 100 1000 10000 0 1020304050607080 ta=125 ta=-25 ta=25 ta=75 ta=150 900 910 920 930 940 950 ave:921.7m ta=25 if=100ma n=30pcs 0 10 20 30 40 50 60 70 80 90 100 ta=25 vr=80v n=10pcs ave:9.655na 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 ave:1.040pf ta=25 vr=6v f=1mhz n=10pcs 0 5 10 15 20 ave:3.50a 8.3ms ifsm 1cyc ave:1.93ns ta=25 vr=6v if=5ma rl=50 n=10pcs 0 1 2 3 4 5 1 10 100 1 10 100 0.1 1 10 100 t ifsm 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-c) rth(j-a) 0 1 2 3 4 5 6 7 8 9 10 c=100pf r=1.5k c=200pf r=0 ave:0.97kv ave:2.54kv 8.3ms ifsm 1cyc 8.3ms 1ms im=1ma if=10ma 300us time mounted on epoxy board 0.1 1 10 0 5 10 15 20 f=1mhz 2/2 2011.06 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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